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PD-97180
RADIATION HARDENED POWER MOSFET SURFACE MOUNT (LCC-18)
Product Summary
Part Number Radiation Level IRHE9110 100K Rads (Si) IRHE93110 300K Rads (Si) RDS(on) ID 1.1 -2.3A 1.1 -2.3A
IRHE9110 100V - P CHANNEL
RAD-HardTM HEXFET(R) TECHNOLOGY
LCC - 18
International Rectifier's RAD-Hard T M HEXFET (R) technology provides high performance power MOSFETs for space applications. This technology has over a decade of proven performance and reliability in satellite applications. These devices have been characterized for both Total Dose and Single Event Effects (SEE). The combination of low Rdson and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters.
Features:
n n n n n n n n n
Single Event Effect (SEE) Hardened Low RDS(on) Low Total Gate Charge Simple Drive Requirements Ease of Paralleling Hermetically Sealed Ceramic Package Surface Mount Light Weight
Absolute Maximum Ratings
Parameter
ID @ VGS = -12V, TC=25C ID @ VGS = -12V, TC=100C IDM PD @ TC = 25C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current A Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy A Avalanche Current A Repetitive Avalanche Energy A Peak Diode Recovery dv/dt A Operating Junction Storage Temperature Range Pckg. Mounting Surface Temp. Weight For footnotes refer to the last page -2.3 -1.5 -9.2 15 0.1 20 75 -2.3 1.5 -12.5 -55 to 150 300 (for 5s) 0.42 (Typical)
Pre-Irradiation
Units
A W
W/C
V mJ A mJ V/ns C g
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IRHE9110
Pre-Irradiation
Electrical Characteristics @ Tj = 25C (Unless Otherwise Specified)
Parameter
BVDSS Drain-to-Source Breakdown Voltage BVDSS /T J Temperature Coefficient of Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage g fs Forward Transconductance IDSS Zero Gate Voltage Drain Current
Min
-100 -- -- -2.0 0.7 -- -- -- -- -- -- -- -- -- -- -- --
Typ Max Units
-- -0.094 -- -- -- -- -- -- -- -- -- -- -- -- -- -- 6.1 -- -- 1.1 -4.0 -- -25 -250 -100 100 16 4.3 3.3 21 17 32 32 -- V V/C V S( ) A
Test Conditions
VGS = 0V, ID = -1.0mA Reference to 25C, ID = -1.0mA VGS = -12V, ID = -1.5A A VDS = VGS, ID = -1.0mA VDS = -15V, IDS = -1.5A A VDS= -80V ,VGS=0V VDS = -80V, VGS = 0V, TJ = 125C VGS = -20V VGS = 20V VGS = -12V, ID = -2.3A VDS = -50V VDD = -50V, ID = -2.3A, VGS = -12V, RG = 7.5
IGSS IGSS Qg Q gs Q gd td(on) tr td(off) tf LS + LD
Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (`Miller') Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance
nA nC
ns
nH
Measured from the center of drain pad to center of source pad VGS = 0V, VDS = -25V f = 1.0MHz f = 1.0MHz, open drain
C iss C oss C rss Rg
Input Capacitance Output Capacitance Reverse Transfer Capacitance Internal Gate Resistance
-- -- --
290 94 13 20.5
-- -- --
pF
Source-Drain Diode Ratings and Characteristics
Parameter
IS ISM VSD trr Q RR ton Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) A Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time
Min Typ Max Units
-- -- -- -- -- -- -- -- -- -- -2.3 -9.2 2.6 138 520
Test Conditions
A
V nS nC Tj = 25C, IS = -2.3A, VGS = 0V A Tj = 25C, IF = -2.3A, di/dt -100A/s VDD -25V A
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Thermal Resistance
Parameter
RthJC RthJPCB RthJA Junction-to-Case Junction-to-PC Board Junction-to-Air
Min Typ Max
-- -- -- 19 8.3 -- 75
Units
C/W
Test Conditions
Solder to a copper clad PC Board Typical Socket
For footnotes refer to the last page
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Radiation Characteristics Pre-Irradiation
IRHE9110
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability. The hardness assurance program at International Rectifier is comprised of two radiation environments. Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @ Tj = 25C, Post Total Dose Irradiation AA
Parameter
BVDSS VGS(th) IGSS IGSS IDSS RDS(on) VSD Drain-to-Source Breakdown Voltage Gate Threshold Voltage Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Zero Gate Voltage Drain Current Static Drain-to-Source A On-State Resistance (TO-3) Diode Forward Voltage A 100K Rads(Si)1 Min Max -100 - 2.0 -- -- -- -- -- -- - 4.0 -100 100 -25 1.06 -2.6 300K Rads (Si)2 Units Min Max -100 -2.0 -- -- -- -- -- -- -5.0 -100 100 -25 1.06 -2.6 V nA A V
Test Conditions
VGS = 0V, ID = -1.0mA VGS = VDS , ID = -1.0mA VGS = -20V VGS = 20 V VDS= -80V, VGS= 0V VGS = -12V, I D = -1.5A VGS = 0V, IS = -2.3A
1. Part number IRHE9110 2. Part number IRHE93110
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Single Event Effect Safe Operating Area
Ion Cu Br I LET MeV/(mg/cm2)) 28 36.8 59.8 Energy (MeV) 285 305 343 Range VDS(V) (m) @VGS=0V @VGS=5V @VGS=10V @VGS=15V @VGS=20V 43 -100 -100 -100 -70 -60 39 -100 -100 -70 -50 -40 32.6 -60 -- -- -- --
-120 -100 -80 VDS -60 -40 -20 0 0 5 10 VGS 15 20 Cu Br I
Fig a. Single Event Effect, Safe Operating Area
For footnotes refer to the last page
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IRHE9110
Pre-Irradiation
10
10
-I D, Drain-to-Source Current (A)
1
-5.0V
-I D, Drain-to-Source Current (A)
VGS TOP -15V -12V -10V -9.0V -8.0V -7.0V -6.0V BOTTOM -5.0V
VGS -15V -12V -10V -9.0V -8.0V -7.0V -6.0V BOTTOM -5.0V TOP
1
-5.0V
60s PULSE WIDTH Tj = 25C 0.1 0.1 1 10 100 -VDS, Drain-to-Source Voltage (V)
60s PULSE WIDTH Tj = 150C 0.1 0.1 1 10 100 -VDS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
10
RDS(on) , Drain-to-Source On Resistance
2.5
T J = 25C
-I D, Drain-to-Source Current (A)
ID = -2.3A
2.0
T J = 150C
(Normalized)
1.5
1.0
VDS = -50V 60s PULSE WIDTH 1.0 5 6 7 8 9 10 11 12 13 14 15 -VGS, Gate-to-Source Voltage (V)
0.5
VGS = -12V
0.0 -60 -40 -20 0 20 40 60 80 100 120 140 160
TJ , Junction Temperature (C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
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Pre-Irradiation
IRHE9110
500
-VGS, Gate-to-Source Voltage (V)
400
VGS = 0V, f = 1 MHz C iss = C gs + C gd, C ds SHORTED C rss = C gd C oss = C ds + C gd
20 ID = -2.3A 16 VDS = -80V VDS = -50V VDS = -20V
C, Capacitance (pF)
300
Ciss
12
200
Coss
8
100
4 FOR TEST CIRCUIT SEE FIGURE 13 0 0 2 4 6 8 10 12 14
Crss
0 1 10 100
-VDS, Drain-to-Source Voltage (V)
QG, Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
10
100
1
T J = 150C
-I D, Drain-to-Source Current (A)
-I SD, Reverse Drain Current (A)
OPERATION IN THIS AREA LIMITED BY R DS(on) 10
T J = 25C
100s
1 Tc = 25C Tj = 150C Single Pulse 1 10 100
0.1
1ms 10ms
VGS = 0V 0.01 0 0.5 1 1.5 2 2.5 3 3.5 4 -V SD , Source-to-Drain Voltage (V)
0.1
1000
-V DS , Drain-to-Source Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
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IRHE9110
Pre-Irradiation
2.5
VGS
V DS
RD
2
-I D, Drain Current (A)
1.5
VGS
Pulse Width 1 s Duty Factor 0.1 %
1
Fig 10a. Switching Time Test Circuit
0.5
VGS
td(on) tr t d(off) tf
0 25 50 75 100 125 150 T C , Case Temperature (C)
10%
90%
Fig 9. Maximum Drain Current Vs. Case Temperature
VDS
Fig 10b. Switching Time Waveforms
10
D = 0.50
Thermal Response ( Z thJC )
0.20
1
0.10 0.05 0.02 0.01 SINGLE PULSE ( THERMAL RESPONSE )
P DM t1 t2
0.1
Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc
0.01 1E-005 0.0001 0.001 0.01 0.1 1 10
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
6
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-
RG
D.U.T. V DD
Pre-Irradiation
IRHE9110
VDS
L
180
EAS , Single Pulse Avalanche Energy (mJ)
RG
D.U.T
IAS
-20V VGS
DRIVER
0.01
VDD A
160 140 120 100 80 60 40 20 0 25 50 75
TOP BOTTOM
tp
ID -1.0A -1.5A -2.3A
15V
Fig 12a. Unclamped Inductive Test Circuit
I AS
100
125
150
Starting T J , Junction Temperature (C)
Fig 12c. Maximum Avalanche Energy Vs. Drain Current
tp V(BR)DSS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator Same Type as D.U.T.
QG
50K
VG
VGS
-3mA
Charge
IG
ID
Current Sampling Resistors
Fig 13a. Basic Gate Charge Waveform
Fig 13b. Gate Charge Test Circuit
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QGS
QGD
D.U.T.
-
-12V
-12V 12V
.2F .3F
VDS
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IRHE9110
Pre-Irradiation
Footnotes:
A Repetitive Rating; Pulse width limited by
maximum junction temperature. A VDD = -25V, starting TJ = 25C, L= 28mH Peak IL = -2.3A, VGS = -12V A ISD -2.3A, di/dt -540A/s, VDD -100V, TJ 150C
A Pulse width 300 s; Duty Cycle 2% A Total Dose Irradiation with VGS Bias.
-12volt VGS applied and V DS = 0 during irradiation per MIL-STD-750, method 1019, condition A. A Total Dose Irradiation with VDS Bias. -80volt VDS applied and V GS = 0 during irradiation per MlL-STD-750, method 1019, condition A.
Case Outline and Dimensions -- LCC-18
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 IR LEOMINSTER : 205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 07/2007
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